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Charge Carrier Mobility And Series Resistance Extraction In 2D FieldEffect Transistors

ТЕГИ: Charge Carrier Mobility Series Resistance Extraction FieldEffect Transistors

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Flexible Extraction of Today's Wide-Bandgap Device Models with IC-CAP GaN RF Solutions

nanoHUB-U Nanoscale Transistors L4.6: The Quasi-Ballistic Nanotransistor - Comparison to Experiment

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University of Texas at Austin | United States | Prof. Sanjay Banerjee | Keynote Lecture | #Vebleo

Kristian Sommer Thygesen: Computational High-throughput Discovery of Novel 2D Materials

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Online Spintronics Seminar #26: Saroj Dash

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